IRHQ7214 - (IRHQx214) RADIATION HARDENED POWER MOSFET SURFACE MOUNT
Features
n n n n n n n n n n
Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Package Surface Mount Light Weight
Absolute Maximum Ratings ( Per Die)
Parameter
ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source.
IRHQ3110- (IRHQx110) RADIATION HARDENED POWER MOSFET SURFACE MOUNT
IRHQ3214- (IRHQx214) RADIATION HARDENED POWER MOSFET SURFACE MOUNT
IRHQ4110- (IRHQx110) RADIATION HARDENED POWER MOSFET SURFACE MOUNT
IRHQ4214- (IRHQx214) RADIATION HARDENED POWER MOSFET SURFACE MOUNT
IRHQ53110- (IRHQ5x110) RADIATION HARDENED POWER MOSFET SURFACE MOUNT
IRHQ54110- (IRHQ5x110) RADIATION HARDENED POWER MOSFET SURFACE MOUNT
IRHQ563110- (IRHQ567110 / IRHQ563110) POWER MOSFET SURFACE MOUNT
Full PDF Text Transcription
Click to expand full text
www.DataSheet4U.com
PD - 93828A
IRHQ7214 RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-28)
Product Summary
Part Number Radiation Level IRHQ7214 100K Rads (Si) IRHQ3214 300K Rads (Si) IRHQ4214 IRHQ8214 600K Rads (Si) 1000K Rads (Si)
TM
250V, QUAD N-CHANNEL
RAD-Hard HEXFET
™ ®
MOSFET TECHNOLOGY
RDS(on) 2.25Ω 2.25Ω 2.25Ω 2.25Ω
ID 1.6A 1.6A 1.6A 1.6A
LCC-28
International Rectifier’s RAD-Hard MOSFET technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE).
IRHQ7214 Datasheet
