IRHQ563110 - (IRHQ567110 / IRHQ563110) POWER MOSFET SURFACE MOUNT
This page provides the datasheet information for the IRHQ563110, a member of the IRHQ567110 (IRHQ567110 / IRHQ563110) POWER MOSFET SURFACE MOUNT family.
Features
n n n n n n n n n n
Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Package Surface Mount Light Weight
Absolute Maximum Ratings ( Per Die)
Parameter
ID @ VGS = ±12V, TC = 25°C ID @ VGS = ±12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Sourc.
IRHQ57214SE- RADIATION HARDENED POWER MOSFET SURFACE MOUNT
IRHQ58110- (IRHQ5x110) RADIATION HARDENED POWER MOSFET SURFACE MOUNT
IRHQ3110- (IRHQx110) RADIATION HARDENED POWER MOSFET SURFACE MOUNT
IRHQ3214- (IRHQx214) RADIATION HARDENED POWER MOSFET SURFACE MOUNT
Full PDF Text Transcription
Click to expand full text
www.DataSheet4U.com
PD - 94057B
IRHQ567110 RADIATION HARDENED 100V, Combination 2N-2P-CHANNEL RAD-Hard HEXFET POWER MOSFET SURFACE MOUNT (LCC-28) 4 # TECHNOLOGY
™ ®
Product Summary
Part Number Radiation Level RDS(on) IRHQ567110 100K Rads (Si) 0.27Ω IRHQ563110 300K Rads (Si) 0.29Ω IRHQ567110 100K Rads (Si) 0.96Ω IRHQ563110 300K Rads (Si) 0.98Ω ID 4.6A 4.6A -2.8A -2.8A CHANNEL N N P P
LCC-28
International Rectifier’s RAD-HardTM HEXFET® MOSFET Technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE).
IRHQ563110 Datasheet
