IRHQ57214SE - RADIATION HARDENED POWER MOSFET SURFACE MOUNT
Features
n n n n n n n n n n
Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Package Surface Mount Light Weight
Absolute Maximum Ratings (Per Die)
Parameter
ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current Continuous Drain Current Pulsed Drain Current À Max. Power Dissipation Linear Derating Factor Gate-to-Source Vo.
IRHQ53110- (IRHQ5x110) RADIATION HARDENED POWER MOSFET SURFACE MOUNT
IRHQ54110- (IRHQ5x110) RADIATION HARDENED POWER MOSFET SURFACE MOUNT
IRHQ563110- (IRHQ567110 / IRHQ563110) POWER MOSFET SURFACE MOUNT
IRHQ567110- (IRHQ567110 / IRHQ563110) POWER MOSFET SURFACE MOUNT
IRHQ58110- (IRHQ5x110) RADIATION HARDENED POWER MOSFET SURFACE MOUNT
IRHQ3110- (IRHQx110) RADIATION HARDENED POWER MOSFET SURFACE MOUNT
IRHQ3214- (IRHQx214) RADIATION HARDENED POWER MOSFET SURFACE MOUNT
Full PDF Text Transcription
Click to expand full text
www.DataSheet4U.com
PD-93881C
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-28)
Product Summary
Part Number Radiation Level IRHQ57214SE 100K Rads (Si) RDS(on) 1.5Ω ID 1.9A
IRHQ57214SE 250V, QUAD N-CHANNEL
5
TECHNOLOGY
LCC-28
International Rectifier’s R5TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects(SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low R DS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control.
IRHQ57214SE Datasheet
