IRHQ58110 - (IRHQ5x110) RADIATION HARDENED POWER MOSFET SURFACE MOUNT
This page provides the datasheet information for the IRHQ58110, a member of the IRHQ57110 (IRHQ5x110) RADIATION HARDENED POWER MOSFET SURFACE MOUNT family.
Features
n n n n n n n n n n
Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Package Surface Mount Light Weight
Absolute Maximum Ratings (Per Die)
Parameter
ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source V.
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Full PDF Text Transcription
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PD - 94211A
IRHQ57110 RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-28)
Product Summary
Part Number Radiation Level IRHQ57110 100K Rads (Si) IRHQ53110 IRHQ54110 300K Rads (Si) 600K Rads (Si) RDS(on) 0.27Ω 0.27Ω 0.27Ω 0.29Ω ID 4.6A 4.6A 4.6A 4.6A
100V, Quad N-CHANNEL
RAD-Hard HEXFET
™ ®
4 # TECHNOLOGY
IRHQ58110 1000K Rads (Si)
LCC-28
International Rectifier’s RAD-HardTM HEXFET® MOSFET Technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE).
IRHQ58110 Datasheet
