IRHQ4110 - (IRHQx110) RADIATION HARDENED POWER MOSFET SURFACE MOUNT
This page provides the datasheet information for the IRHQ4110, a member of the IRHQ7110 (IRHQx110) RADIATION HARDENED POWER MOSFET SURFACE MOUNT family.
Features
n n n n n n n n n n
Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Package Surface Mount Light Weight
Absolute Maximum Ratings (Per Die)
Parameter
ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source V.
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PD - 93785A
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-28)
Product Summary
Part Number Radiation Level IRHQ7110 100K Rads (Si) IRHQ3110 IRHQ4110 IRHQ8110 300K Rads (Si) 600K Rads (Si) 1000K Rads (Si)
TM
IRHQ7110 100V, QUAD N-CHANNEL
RAD-Hard HEXFET MOSFET TECHNOLOGY
™ ®
RDS(on) 0.6Ω 0.6Ω 0.6Ω 0.75Ω
ID 3.0A 3.0A 3.0A 3.0A
LCC-28
International Rectifier’s RAD-Hard technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE).
IRHQ4110 Datasheet
