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IRHNB7Z60 - RADIATION HARDENED POWER MOSFET

Key Features

  • n n n n n n n n n n Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Ceramic Package Light Weight Absolute Maximum Ratings www. DataSheet4U. com ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Pre-Irradiation Units 75.
  • 75.
  • 300 300 2.4 ±20 500 75 30 0.35 -55 to 150 300 ( for 5 sec. ) 3.3 (Typical ) Parameter Continuous.

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IRHNB7064 RADIATION HARDENED POWER MOSFET
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PD - 91754A RADIATION HARDENED POWER MOSFET SURFACE MOUNT(SMD-3) Product Summary Part Number IRHNB7Z60 IRHNB3Z60 IRHNB4Z60 IRHNB8Z60 Radiation Level 100K Rads (Si) 300K Rads (Si) 600K Rads (Si) 1000K Rads (Si) RDS(on) 0.009Ω 0.009Ω 0.009Ω 0.009Ω ID 75*A 75*A 75*A 75*A IRHNB7Z60 30V, N-CHANNEL RAD-Hard HEXFET TECHNOLOGY ™ ® SMD-3 International Rectifier’s RADHard technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low Rds(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control.