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IRHNB7064 - RADIATION HARDENED POWER MOSFET

Key Features

  • n n n n n n n n n Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Light Weight Absolute Maximum Ratings www. DataSheet4U. com ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Pre-Irradiation Units 75.
  • 56 300 300 2.4 ±20 500 75.
  • 30 2.5 -55 to 150 300 ( for 5 sec. ) 3.5 (Typical ) Parameter Continuous Drain Current Cont.

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PD - 91737A RADIATION HARDENED POWER MOSFET SURFACE MOUNT(SMD-3) Product Summary Part Number IRHNA7064 IRHNA3064 IRHNA4064 IRHNA8064 Radiation Level RDS(on) 100K Rads (Si) 0.015Ω 300K Rads (Si) 0.015Ω 600K Rads (Si) 0.015Ω 1000K Rads (Si) 0.015Ω HEXFET® ID 75*A 75*A 75*A 75*A IRHNB7064 60V, N-CHANNEL RAD Hard HEXFET TECHNOLOGY ™ ® SMD-3 International Rectifier’s RADHard technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low Rdson and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control.