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IRHNB7260 - RADIATION HARDENED POWER MOSFET

Key Features

  • n n n n n n n n n Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Light Weight Absolute Maximum Ratings www. DataSheet4U. com ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Pre-Irradiation Units 43 27 172 300 2.4 ±20 500 43 30 5.7 -55 to 150 300 (for 5 Sec. ) 3.5 (Typical ) Parameter Continuous Drain Current Continuous Drai.

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IRHNB7264SE RADIATION HARDENED POWER MOSFET
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PD - 91798A RADIATION HARDENED POWER MOSFET SURFACE MOUNT(SMD-3) Product Summary Part Number Radiation Level IRHNB7260 100K Rads (Si) IRHNB3260 300K Rads (Si) IRHNB4260 600K Rads (Si) IRHNB8260 1000K Rads (Si) R DS(on) 0.070Ω 0.070Ω 0.070Ω 0.070Ω ID 43A 43A 43A 43A IRHNB7260 200V, N-CHANNEL RAD Hard HEXFET TECHNOLOGY ™ ® SMD-3 International Rectifier’s RADHard HEXFET® technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low Rdson and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control.