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IRHNB7460SE - RADIATION HARDENED POWER MOSFET

Key Features

  • ! ! ! ! ! ! ! ! ! Single Event Effect (SEE) Hardened Ultra Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Light Weight Absolute Maximum Ratings www. DataSheet4U. com ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Pre-Irradiation Units 20 12 80 300 2.4 ±20 500 20 30 3.8 -55 to 150 300 (for 5 sec. ) 3.5(Typical) Parameter Continuous Drain Current Continuous Dr.

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IRHNB7064 RADIATION HARDENED POWER MOSFET
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IRHNB7360SE RADIATION HARDENED POWER MOSFET

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PD - 91741A RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-3) Product Summary Part Number IRHNB7460SE Radiation Level RDS(on) 100K Rads (Si) 0.32Ω ID 20A IRHNB7460SE 500V, N-CHANNEL RAD Hard HEXFET TECHNOLOGY ™ ® SMD-3 International Rectifier’s RADHardTM HEXFET® MOSFET technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control.