Datasheet Details
| Part number | IRHNB7160 |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 249.92 KB |
| Description | RADIATION HARDENED POWER MOSFET |
| Datasheet |
 IRHNB7160 Datasheet
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Key Features
- ! ! ! ! ! ! ! ! ! ! Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Package Surface Mount Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Sin.