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IRHN9250 - RADIATION HARDENED POWER MOSFET

Key Features

  • n n n n n n n n n n Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Ceramic Package Light Weight Absolute Maximum Ratings Parameter ID @ VGS = -12V, TC = 25°C ID @ VGS = -12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS I AR EAR dv/dt TJ TSTG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage S.

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Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRHN9230 P-CHANNEL TRANSISTOR
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com PD - 91300D RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-1) Product Summary Part Number Radiation Level IRHN9250 100K Rads (Si) IRHN93250 300K Rads (Si) RDS(on) 0.315Ω 0.315Ω ID -14A -14A IRHN9250 JANSR2N7423U 200V, P-CHANNEL REF: MIL-PRF-19500/662 RAD Hard HEXFET TECHNOLOGY QPL Part Number JANSR2N7423U JANSF2N7423U ™ ® International Rectifier’s RADHard HEXFETTM technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE).