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Provisional Data Sheet No. PD-9.1476A
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFET® TRANSISTOR
IRHN2C50SE IRHN7C50SE
N-CHANNEL
SINGLE EVENT EFFECT (SEE) RAD HARD
600 Volt, 0.60Ω, (SEE) RAD HARD HEXFET
International Rectifier’s (SEE) RAD HARD technology HEXFETs demonstrate virtual immunity to SEE failure. Additionally, under identical pre- and post-radiation test conditions, International Rectifier’s RAD HARD HEXFETs retain identical electrical specifications up to 1 x 105 Rads (Si) total dose. No compensation in gate drive circuitry is required. These devices are also capable of surviving transient ionization pulses as high as 1 x 1012 Rads (Si)/Sec, and return to normal operation within a few microseconds.
IRHN2C50SE Datasheet
