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IRHN3150 - Radiation Hardened Power MOSFET

Datasheet Summary

Description

IR HiRel rad hard HEXFET technology provides high performance power MOSFETs for space applications.

This technology has over a decade of proven performance and reliability in satellite applications.

These devices have been characterized for both Total Dose and Single Event Effects (SEE).

Features

  • Single event effect (SEE) hardened.
  • Low RDS(on).
  • Low total gate charge.
  • Simple drive requirements.
  • Hermetically sealed.
  • Electrically isolated.
  • Ceramic eyelets.
  • Light weight.
  • Surface Mount.
  • ESD rating: Class 3A per MIL-STD-750, Method 1020 Product Summary.
  • BVDSS: 100V.
  • ID : 34A.
  • RDS(on),max : 65m.
  • QG,max : 160nC.
  • REF: MIL-PRF-19500/603 Potential.

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Datasheet preview – IRHN3150

Datasheet Details

Part number IRHN3150
Manufacturer International Rectifier
File Size 1.56 MB
Description Radiation Hardened Power MOSFET
Datasheet download datasheet IRHN3150 Datasheet
Additional preview pages of the IRHN3150 datasheet.

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Full PDF Text Transcription

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IRHN7150 (JANSR2N7268U) Radiation Hardened Power MOSFET Surface Mount (SMD-1) 100V, 34A, N-channel, Rad Hard HEXFET™ Technology PD-90720G Features  Single event effect (SEE) hardened  Low RDS(on)  Low total gate charge  Simple drive requirements  Hermetically sealed  Electrically isolated  Ceramic eyelets  Light weight  Surface Mount  ESD rating: Class 3A per MIL-STD-750, Method 1020 Product Summary  BVDSS: 100V  ID : 34A  RDS(on),max : 65m  QG,max : 160nC  REF: MIL-PRF-19500/603 Potential Applications  DC-DC converter  Motor drives SMD-1 Product Validation Qualified to JANS screening flow according to MIL-PRF-19500 for space applications Description IR HiRel rad hard HEXFET technology provides high performance power MOSFETs for space applications.
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