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IRHN8450 - (IRHN7450 / IRHN8450) HEXFET TRANSISTOR

Download the IRHN8450 datasheet PDF. This datasheet also covers the IRHN7450 variant, as both devices belong to the same (irhn7450 / irhn8450) hexfet transistor family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • n n n n n n n n n n n n n n n Radiation Hardened up to 1 x 106 Rads (Si) Single Event Burnout (SEB) Hardened Single Event Gate Rupture (SEGR) Hardened Gamma Dot (Flash X-Ray) Hardened Neutron Tolerant Identical Pre- and Post-Electrical Test Conditions Repetitive Avalanche Rating Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Hermetically Sealed Electrically Isolated Ceramic Eyelets Surface Mount Light Weight Absolute Maximum Ratings  Parameter ID @ VGS = 12V, TC = 25°C ID.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRHN7450_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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IRH3 INCREMENTAL HOLLOW-SHAFT ENCODER HEIDENHAIN
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Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRHN8150 RADIATION HARDENED POWER MOSFET
IRHN8230 N-Channel Transistor
IRHN2C50SE N-Channel Transistor
IRHN3150 Radiation Hardened Power MOSFET
IRHN4150 RADIATION HARDENED POWER MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com PD - 90819A REPETITIVE AVALANCHE AND dv/dt RATED HEXFET® TRANSISTOR 500Volt, 0.45Ω , MEGA RAD HARD HEXFET International Rectifier’s RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability and breakdown voltage stability at total radiaition doses as high as 1x106 Rads(Si). Under identical pre- and post-irradiation test conditions, International Rectifier’s RAD HARD HEXFETs retain identical electrical specifications up to 1 x 105 Rads (Si) total dose. No compensation in gate drive circuitry is required. These devices are also capable of surviving transient ionization pulses as high as 1 x 1012 Rads (Si)/Sec, and return to normal operation within a few microseconds.