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IRHN8230 - N-Channel Transistor

Download the IRHN8230 datasheet PDF. This datasheet also covers the IRHN7230 variant, as both devices belong to the same n-channel transistor family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • s s s s s s s s s s s s s Radiation Hardened up to 1 x 10 6 Rads (Si) Single Event Burnout (SEB) Hardened Single Event Gate Rupture (SEGR) Hardened Gamma Dot (Flash X-Ray) Hardened Neutron Tolerant Identical Pre- and Post-Electrical Test Conditions Repetitive Avalanche Rating Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Light-weight Absolute Maximum Ratings Parameter I D @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRHN7230_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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IRH3 INCREMENTAL HOLLOW-SHAFT ENCODER HEIDENHAIN
IRH310 INCREMENTAL HOLLOW-SHAFT ENCODER HEIDENHAIN

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRHN8150 RADIATION HARDENED POWER MOSFET
IRHN8450 (IRHN7450 / IRHN8450) HEXFET TRANSISTOR
IRHN2C50SE N-Channel Transistor
IRHN3150 Radiation Hardened Power MOSFET
IRHN4150 RADIATION HARDENED POWER MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com Previous Datasheet Index Next Data Sheet Provisional Data Sheet No. PD-9.822A REPETITIVE AVALANCHE AND dv/dt RATED HEXFET® TRANSISTOR IRHN7230 IRHN8230 N-CHANNEL MEGA RAD HARD 200 Volt, 0.40Ω, MEGA RAD HARD HEXFET International Rectifier’s MEGA RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability and breakdown voltage stability at total radiation doses as high as 1 x 106 Rads (Si). Under identical preand post-radiation test conditions, International Rectifier’s RAD HARD HEXFETs retain identical electrical specifications up to 1 x 105 Rads (Si) total dose. At 1 x 106 Rads (Si) total dose, under the same pre-dose conditions, only minor shifts in the electrical specifications are observed and are so specified in table 1.