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IRHMJ7250 - (IRHMJx250) RADIATION HARDENED POWER MOSFET SURFACE MOUNT

Download the IRHMJ7250 datasheet PDF. This datasheet also covers the IRHMJ3250 variant, as both devices belong to the same (irhmjx250) radiation hardened power mosfet surface mount family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • n n n n n n n n n Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Eyelets Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current À Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalan.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRHMJ3250_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com PD-96914 RADIATION HARDENED POWER MOSFET RAD Hard HEXFET SURFACE MOUNT (TO-254AA Tabless) ™ IRHMJ7250 200V, N-CHANNEL ® TECHNOLOGY Product Summary Part Number Radiation Level IRHMJ7250 100K Rads (Si) IRHMJ3250 300K Rads (Si) IRHMJ4250 IRHMJ8250 600K Rads (Si) 1000K Rads (Si) RDS(on) 0.10 Ω 0.10 Ω 0.10 Ω 0.10 Ω ID 26A 26A 26A 26A TO-254AA Tabless International Rectifier’s RADHard HEXFET® technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE).