Datasheet Details
| Part number | IRHMJ4250 |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 352.20 KB |
| Description | (IRHMJx250) RADIATION HARDENED POWER MOSFET SURFACE MOUNT |
| Datasheet |
 IRHMJ4250 Datasheet
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Key Features
- n n n n n n n n n Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Eyelets Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current À Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalan.