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IRHMJ57260SE - RADIATION HARDENED POWER MOSFET SURFACE MOUNT

Key Features

  • n n n n n n n n n n Single Event Effect (SEE) Hardened Identical Pre- and Post-Electrical Test Conditions Repetitive Avalanche Ratings Dynamic dv/dt Ratings Simple Drive Requirements Ease of Paralleling Hermetically Sealed Electically Isolated Ceramic Eyelets Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current À Max. Power Di.

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Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRHMJ57160 (IRHMJ5x160) RADIATION HARDENED POWER MOSFET SURFACE MOUNT
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www.DataSheet4U.com PD-96913 RADIATION HARDENED POWER MOSFET SURFACE MOUNT (TO-254AA Tabless) Product Summary Part Number Radiation Level IRHMJ57260SE 100K Rads (Si) RDS(on) ID 0.049Ω 35A* IRHMJ57260SE 200V, N-CHANNEL 5 TECHNOLOGY ™ TO-254AA Tabless International Rectifier’s R5 TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control.