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IRHMB54Z60 - RADIATION HARDENED POWER MOSFET

Download the IRHMB54Z60 datasheet PDF. This datasheet also covers the IRHMB53Z60 variant, as both devices belong to the same radiation hardened power mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • n n n n n n n n n n Low RDS(on) Fast Switching Single Event Effect (SEE) Hardened Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Eyelets Electrically Isolated Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current À Max. Power Dissipation Linear Derating Factor Gate-to-Source Volt.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRHMB53Z60_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IRHM2C50SE N-Channel Transistor IRF
IRHM53260 (IRHM5x260) RADIATION HARDENED POWER MOSFET THRU-HOLE IRF
IRHM54260 (IRHM5x260) RADIATION HARDENED POWER MOSFET THRU-HOLE IRF
IRHM57260 Power MOSFET IRF
IRHM57260SE Power MOSFET IRF

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRHMB54064 RADIATION HARDENED POWER MOSFET
IRHMB53064 RADIATION HARDENED POWER MOSFET
IRHMB53Z60 RADIATION HARDENED POWER MOSFET
IRHMB57064 RADIATION HARDENED POWER MOSFET
IRHMB57260SE RADIATION HARDENED POWER MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com PD-96973 RADIATION HARDENED IRHMB57Z60 POWER MOSFET 30V, N-CHANNEL THRU-HOLE (Tabless - Low-Ohmic TO-254AA) 5 TECHNOLOGY ™ Product Summary Part Number Radiation Level IRHMB57Z60 100K Rads (Si) IRHMB53Z60 300K Rads (Si) IRHMB54Z60 600K Rads (Si) IRHMB58Z60 1000K Rads (Si) RDS(on) ID 0.0045Ω 45A* 0.0045Ω 45A* 0.0045Ω 45A* 0.0045Ω 45A* Tabless Low-Ohmic TO-254AA International Rectifier’s R5 TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control.