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IRHMB53Z60 - RADIATION HARDENED POWER MOSFET

Key Features

  • n n n n n n n n n n Low RDS(on) Fast Switching Single Event Effect (SEE) Hardened Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Eyelets Electrically Isolated Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current À Max. Power Dissipation Linear Derating Factor Gate-to-Source Volt.

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www.DataSheet4U.com PD-96973 RADIATION HARDENED IRHMB57Z60 POWER MOSFET 30V, N-CHANNEL THRU-HOLE (Tabless - Low-Ohmic TO-254AA) 5 TECHNOLOGY ™ Product Summary Part Number Radiation Level IRHMB57Z60 100K Rads (Si) IRHMB53Z60 300K Rads (Si) IRHMB54Z60 600K Rads (Si) IRHMB58Z60 1000K Rads (Si) RDS(on) ID 0.0045Ω 45A* 0.0045Ω 45A* 0.0045Ω 45A* 0.0045Ω 45A* Tabless Low-Ohmic TO-254AA International Rectifier’s R5 TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control.