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IRH9250 - TRANSISTOR P-CHANNEL

Key Features

  • n n n n n n n n n n n n n Radiation Hardened up to 1 x 105 Rads (Si) Single Event Burnout (SEB) Hardened Single Event Gate Rupture (SEGR) Hardened Gamma Dot (Flash X-Ray) Hardened Neutron Tolerant Identical Pre- and Post-Electrical Test Conditions Repetitive Avalanche Rating Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Hermetically Sealed Electrically Isolated Ceramic Eyelets Absolute Maximum Ratings Parameter ID @ VGS = -12V, TC = 25°C I D @ VGS = -12V, TC = 100°C IDM P.

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Previous Datasheet Index Next Data Sheet Provisional Data Sheet No. PD-9.1392 www.DataSheet4U.com AVALANCHE ENERGY AND dv/dt RATED IRH9250 P-CHANNEL HEXFET® TRANSISTOR RAD HARD -200 Volt, 0.315Ω, RAD HARD HEXFET International Rectifier’s P-Channel RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability and breakdown voltage stability at total radiation doses as high as 10 5 Rads (Si). Under identical pre- and postradiation test conditions, International Rectifier’s P-Channel RAD HARD HEXFETs retain identical electrical specifications up to 1 x 105 Rads (Si) total dose. No compensation in gate drive circuitry is required.