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IRH9230 - TRANSISTOR P-CHANNEL

Key Features

  • n Radiation Hardened up to 1 x 105 Rads (Si) n Single Event Burnout (SEB) Hardened n Single Event Gate Rupture (SEGR) Hardened n Gamma Dot (Flash X-Ray) Hardened n Neutron Tolerant n Identical Pre- and Post-Electrical Test Conditions n Repetitive Avalanche Rating n Dynamic dv/dt Rating n Simple Drive Requirements n Ease of Paralleling n Hermetically Sealed Absolute Maximum Ratings Parameter ID @ VGS = -12V, TC = 25°C Continuous Drain Current I D @ VGS = -12V, TC = 100°C Continuous Drain Curren.

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Part Number Description
IRH9250 TRANSISTOR P-CHANNEL
IRH9130 RADIATION HARDENED POWER MOSFET THRU-HOLE
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Previous Datasheet Index Next Data Sheet Provisional Data Sheet No. PD-9.1391 www.DataSheet4U.com AVALANCHE ENERGY AND dv/dt RATED IRH9230 P-CHANNEL HEXFET TRANSISTOR ® RAD HARD -200 Volt, 0.8Ω , RAD HARD HEXFET International Rectifier’s P-Channel RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability and breakdown voltage stability at total radiation doses as high as 105 Rads (Si). Under identical pre- and post-radiation test conditions, International Rectifier’s P-Channel RAD HARD HEXFETs retain identical electrical specifications up to 1 x 105 Rads (Si) total dose. No compensation in gate drive circuitry is required.