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IRH9130 - RADIATION HARDENED POWER MOSFET THRU-HOLE

Key Features

  • n n n n n n n n n Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Package Light Weight Absolute Maximum Ratings Parameter ID @ VGS = -12V, TC = 25°C ID @ VGS = -12V, TC = 100°C IDM PD @ T C = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Ava.

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Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRH9150 RADIATION HARDENED POWER MOSFET THRU-HOLE
IRH9230 TRANSISTOR P-CHANNEL
IRH9250 TRANSISTOR P-CHANNEL
IRH7054 Radiation Hardened Power MOSFET
IRH7130 RADIATION HARDENED POWER MOSFET

Full PDF Text Transcription (Reference)

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www.DataSheet4U.com PD - 90880C RADIATION HARDENED POWER MOSFET THRU-HOLE (T0-204AA) Product Summary Part Number Radiation Level R DS(on) IRH9130 100K Rads (Si) 0.3Ω IRH93130 300K Rads (Si) 0.3Ω ID -11A -11A IRH9130 100V, P-CHANNEL RADHard HEXFET TECHNOLOGY ™ ® International Rectifier’s RADHard HEXFET® technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low Rdson and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control.