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IRGS4715DPBF - Insulated Gate Bipolar Transistor

Features

  • Low VCE(ON) and Switching Losses 5.5µs Short Circuit SOA Square RBSOA Maximum Junction Temperature 175°C Positive VCE (ON) Temperature Coefficient Lead-Free, RoHs compliant IRGB4715DPbF IRGS4715DPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode   C  C G E n-channel G CE IRGS4715DPbF  D2‐Pak  E C G IRGB4715DPbF  TO‐220AB  G Gate C Collector E Emitter Benefits High Efficiency in a Wide Range of.

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  VCES = 650V IC = 15A, TC =100°C tSC 5.5µs, TJ(max) = 175°C VCE(ON) typ. = 1.7V @ IC = 8A Applications • Industrial Motor Drive • UPS • Solar Inverters • Welding Features Low VCE(ON) and Switching Losses 5.
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