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IRGS4640DPbF - Insulated Gate Bipolar Transistor

Features

  • E n-channel G Gate E GC IRGS4640DPbF D2Pak GCE E C GCE G GCE IRGSL4640DPbF IRGB4640DPbF IRGP4640DPbF IRGP4640D-EPbF TO-262Pak TO-220AC TO-247AC TO-247AD C Collector E Emitter Benefits Low VCE(ON) and switching losses High efficiency in a wide range of.

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Datasheet Details

Part number IRGS4640DPbF
Manufacturer Infineon
File Size 752.59 KB
Description Insulated Gate Bipolar Transistor
Datasheet download datasheet IRGS4640DPbF Datasheet

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Full PDF Text Transcription

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VCES = 600V IRGS4640DPbF IRGSL4640DPbF IRGB4640DPbF IRGP4640D(-E)PbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode C IC = 40A, TC =100°C tSC ≥ 5µs, TJ(max) = 175°C G VCE(ON) typ. = 1.
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