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IRGS4610DPBF - INSULATED GATE BIPOLAR TRANSISTOR

Download the IRGS4610DPBF datasheet PDF. This datasheet also covers the IRGR4610DPBF variant, as both devices belong to the same insulated gate bipolar transistor family and are provided as variant models within a single manufacturer datasheet.

Features

  • Low VCE(ON) and switching losses Square RBSOA and maximum junction temperature 175°C Positive VCE(ON) temperature coefficient and tighter distribution of parameters 5μs short circuit SOA Lead-free, RoHS compliant G ate C ollector Em itter → Benefits High efficiency in a wide range of.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRGR4610DPBF-InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRGS4615DPBF Power MOSFET
IRGS4607DPBF Insulated Gate Bipolar Transistor
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IRGS4630DPBF Insulated Gate Bipolar Transistor
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Full PDF Text Transcription

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IRGR4610DPbF IRGS4610DPbF IRGB4610DPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V IC = 10A, TC = 100°C tsc > 5µs, Tjmax = 175°C G E E G D-Pak IRGR4610DPbF G D2-Pak IRGS4610DPbF C C C C E G C E VCE(on) typ. = 1.
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