Datasheet4U Logo Datasheet4U.com

IRGS4620DPBF - Power MOSFET

Download the IRGS4620DPBF datasheet PDF. This datasheet also covers the IRGB4620DPBF variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Features

  • Low VCE(ON) and switching losses Square RBSOA and maximum junction temperature 175°C Benefits High efficiency in a wide range of.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRGB4620DPBF-InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IRGS4620DPbF IGBT Infineon
IRGS4630DPbF IGBT Infineon
IRGS4640DPbF Insulated Gate Bipolar Transistor Infineon
IRGSL4640DPbF Insulated Gate Bipolar Transistor Infineon
IRG4BC20F INSULATED GATE BIPOLAR TRANSISTOR IRF

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRGS4607DPBF Insulated Gate Bipolar Transistor
IRGS4610DPBF INSULATED GATE BIPOLAR TRANSISTOR
IRGS4615DPBF Power MOSFET
IRGS4630DPBF Insulated Gate Bipolar Transistor
IRGS4045DPBF Insulated Gate Bipolar Transistor

Full PDF Text Transcription

Click to expand full text
IRGS4620DPbF IRGB4620DPbF IRGP4620D(-E)PbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V IC = 20A, TC =100°C tSC ≥ 5µs, TJ(max) = 175°C VCE(ON) typ. = 1.
Published: |