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IRGS4065PBF - IGBT

Download the IRGS4065PBF datasheet PDF. This datasheet also covers the IRGB4065PBF variant, as both devices belong to the same igbt family and are provided as variant models within a single manufacturer datasheet.

Description

This IGBT is specifically designed for applications in Plasma Display Panels.

This device utilizes advanced trench IGBT technology to achieve low VCE(on) and low EPULSETM rating per silicon area which improve panel efficiency.

Features

  • Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuits in PDP.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRGB4065PBF_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by International Rectifier (now Infineon)

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Full PDF Text Transcription

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www.DataSheet4U.com PD - 97059B PDP TRENCH IGBT Features Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuits in PDP applications TM) l Low VCE(on) and Energy per Pulse (EPULSE for improved panel efficiency l High repetitive peak current capability l Lead Free package l IRGB4065PbF IRGS4065PbF Key Parameters 300 1.75 205 150 V V A °C VCE min VCE(ON) typ. @ IC = 70A IRP max @ TC= 25°C c T J max C C C E C G D2Pak IRGS4065DPbF G E E C G n-channel TO-220 IRGB4065DPbF G Gate C Collector E Emitter Description This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced trench IGBT technology to achieve low VCE(on) and low EPULSETM rating per silicon area which improve panel efficiency.
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