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IRGPS46160D - Insulated Gate Bipolar Transistor

Download the IRGPS46160D datasheet PDF. This datasheet also covers the IRGPS46160DPBF variant, as both devices belong to the same insulated gate bipolar transistor family and are provided as variant models within a single manufacturer datasheet.

Features

  • Low VCE(ON) and Switching Losses Square RBSOA and Maximum Junction Temperature 175°C Positive VCE (ON) Temperature Coefficient 5µs short circuit SOA Lead-Free, RoHS compliant IRGPS46160DPbF.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRGPS46160DPBF-InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription

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VCES = 600V IC = 160A, TC = 100°C tSC 5µs, TJ(max) = 175°C VCE(on) typ. = 1.
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