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PD- 95899A
IRGPS40B120UP
INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT
Features
• Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE (on) Temperature Coefficient. • Super-247 Package. • Lead-Free
C
VCES = 1200V VCE(on) typ. = 3.12V
G E
@ VGE = 15V,
n-channel
Benefits
• Benchmark Efficiency for Motor Control. • Rugged Transient Performance. • Low EMI. • Significantly Less Snubber Required • Excellent Current Sharing in Parallel Operation.
IRGPS40B120UP Datasheet
