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IRGP4690D-EPBF - INSULATED GATE BIPOLAR TRANSISTOR

Download the IRGP4690D-EPBF datasheet PDF (IRGP4690DPBF included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for insulated gate bipolar transistor.

Features

  • Low VCE(ON) and Switching Losses Square RBSOA and Maximum Junction Temperature 175°C Positive VCE (ON) Temperature Coefficient 5μs short circuit SOA Lead-Free, RoHS compliant Benefits High efficiency in a wide range of.

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Note: The manufacturer provides a single datasheet file (IRGP4690DPBF-InternationalRectifier.pdf) that lists specifications for multiple related part numbers.
Other Datasheets by International Rectifier

Full PDF Text Transcription

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IRGP4690DPbF IRGP4690D-EPbF VCES = 600V IC = 90A, TC = 100°C INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE CC C tSC ≥ 5μs, TJ(max) = 175°C VCE(on) typ. = 1.
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