IRGP4630DPbF - Insulated Gate Bipolar Transistor

This page provides the datasheet information for the IRGP4630DPbF, a member of the IRGS4630DPBF Insulated Gate Bipolar Transistor family.

Features

G Gate C Collector Benefits E Emitter Low VCE(ON) and switching losses High efficiency in a wide range of.

International Rectifier

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Datasheet Details

Part number	IRGP4630DPbF
Manufacturer	International Rectifier
File Size	1.20 MB
Description	Insulated Gate Bipolar Transistor
Datasheet	IRGP4630DPbF Datasheet
Additional preview pages of the IRGP4630DPbF datasheet.

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Full PDF Text Transcription

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IRGS4630DPbF IRGB4630DPbF IRGP4630D(-E)PbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V IC = 30A, TC =100°C C CC C C tSC ≥ 5µs, TJ(max) = 175°C VCE(ON) typ. = 1.

Published: Feb 16, 2016 |