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IRG8P50N120KD-EPbF - INSULATED GATE BIPOLAR TRANSISTOR

Download the IRG8P50N120KD-EPbF datasheet PDF (IRG8P50N120KDPbF included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for insulated gate bipolar transistor.

Features

  • Benchmark Low VCE(ON) 10μs Short Circuit SOA Positive VCE(ON) Temperature Coefficient Square RBSOA and high ILM- rating Lead-Free, RoHS compliant Benefits  High Efficiency in a Motor Drive.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRG8P50N120KDPbF-InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

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Full PDF Text Transcription

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  VCES = 1200V IC = 50A, TC =100°C IRG8P50N120KDPbF IRG8P50N120KD-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode   C  tSC 10µs, TJ(max) = 150°C VCE(ON) typ. = 1.
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