Datasheet4U Logo Datasheet4U.com

IRG8B08N120KDPbF - INSULATED GATE BIPOLAR TRANSISTOR

Features

  • Benchmark Low VCE(ON) 10μs Short Circuit SOA Positive VCE(ON) Temperature Coefficient Square RBSOA and high ILM- rating Lead-Free, RoHS compliant G E n-channel GCE TO-220AB IRG8B08N120KDPbF GCE TO-247AC IRG8P08N120KDPbF GC E TO-247AD IRG8P08N120KD-EPbF G Gate C Collector E Emitter Benefits  High Efficiency in a Motor Drive.

📥 Download Datasheet

📁 Similar Datasheet

  • IRG4BC20F - INSULATED GATE BIPOLAR TRANSISTOR (IRF)
  • IRG4BC20FD - INSULATED GATE BIPOLAR TRANSISTOR (IRF)
  • IRG4BC20FD-S - INSULATED GATE BIPOLAR TRANSISTOR (IRF)
  • IRG4BC20K - INSULATED GATE BIPOLAR TRANSISTOR (IRF)
  • IRG4BC20K-S - INSULATED GATE BIPOLAR TRANSISTOR (IRF)
  • IRG4BC20KD - INSULATED GATE BIPOLAR TRANSISTOR (IRF)
  • IRG4BC20KD-S - INSULATED GATE BIPOLAR TRANSISTOR (IRF)
  • IRG4BC20MD - INSULATED GATE BIPOLAR TRANSISTOR (IRF)
  • IRG4BC20MD-S - INSULATED GATE BIPOLAR TRANSISTOR (IRF)
  • IRG4BC20S - INSULATED GATE BIPOLAR TRANSISTOR (IRF)
Other Datasheets by International Rectifier

Full PDF Text Transcription

Click to expand full text
  IRG8B08N120KDPbF IRG8P08N120KDPbF IRG8P08N120KD-EPbF VCES = 1200V IC = 8A, TC =100°C Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode  C tSC 10µs, TJ(max) = 150°C VCE(ON) typ. = 1.
Published: |