Datasheet4U Logo Datasheet4U.com

IRG7SC28UPbF - PDP Trench IGBT

Description

This IGBT is specifically designed for applications in Plasma Display Panels.

This device utilizes advanced trench IGBT technology to achieve low VCE(on) and low EPULSETM rating per silicon area which improve panel efficiency.

Features

  • l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuits in PDP.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IRG4BC20F INSULATED GATE BIPOLAR TRANSISTOR IRF
IRG4BC20FD INSULATED GATE BIPOLAR TRANSISTOR IRF
IRG4BC20FD-S INSULATED GATE BIPOLAR TRANSISTOR IRF
IRG4BC20K INSULATED GATE BIPOLAR TRANSISTOR IRF
IRG4BC20K-S INSULATED GATE BIPOLAR TRANSISTOR IRF

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRG7SC12FPBF INSULATED GATE BIPOLAR TRANSISTOR
IRG7S313U PDP TRENCH IGBT
IRG7S313UPBF PDP TRENCH IGBT
IRG7S319UPBF PDP TRENCH IGBT
IRG71C28U PDP TRENCH IGBT

Full PDF Text Transcription

Click to expand full text
PD - 97569A PDP TRENCH IGBT IRG7SC28UPbF Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuits in PDP applications l Low VCE(on) and Energy per Pulse (EPULSETM) for improved panel efficiency l High repetitive peak current capability l Lead Free package Key Parameters VCE min 600 cVCE(ON) typ. @ IC = 40A IRP max @ TC= 25°C TJ max 1.70 225 150 CC V V A °C G E n-channel G Gate CE G D2Pak IRG7SC28UPbF C Collector E Emitter Description This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced trench IGBT technology to achieve low VCE(on) and low EPULSETM rating per silicon area which improve panel efficiency.
Published: |