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IRG7S319UPBF - PDP TRENCH IGBT

Description

This IGBT is specifically designed for applications in Plasma Display Panels.

This device utilizes advanced trench IGBT technology to achieve low VCE(on) and low EPULSETM rating per silicon area which improve panel efficiency.

Features

  • l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuits in PDP.

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Full PDF Text Transcription

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PD - 97155 PDP TRENCH IGBT Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuits in PDP applications TM) l Low VCE(on) and Energy per Pulse (EPULSE for improved panel efficiency l High repetitive peak current capability l Lead Free package IRG7S319UPbF Key Parameters 330 1.26 170 150 V V A °C VCE min VCE(ON) typ. @ IC = 20A IRP max @ TC= 25°C TJ max C G E G C E n-channel G Gate C Collector D2Pak IRG7S319UPbF E Emitter Description This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced trench IGBT technology to achieve low VCE(on) and low EPULSETM rating per silicon area which improve panel efficiency.
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