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IRG7S313U - PDP TRENCH IGBT

Download the IRG7S313U datasheet PDF. This datasheet also covers the IRG7S313UPBF variant, as both devices belong to the same pdp trench igbt family and are provided as variant models within a single manufacturer datasheet.

Description

This IGBT is specifically designed for applications in Plasma Display Panels.

This device utilizes advanced trench IGBT technology to achieve low VCE(on) and low EPULSETM rating per silicon area which improve panel efficiency.

Features

  • Key Parameters l Advanced Trench IGBT Technology VCE min 330 V l Optimized for Sustain and Energy Recovery VCE(ON) typ. @ IC = 20A 1.35 V circuits in PDP.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRG7S313UPBF_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRG7S313UPBF PDP TRENCH IGBT
IRG7S319UPBF PDP TRENCH IGBT
IRG7SC12FPBF INSULATED GATE BIPOLAR TRANSISTOR
IRG7SC28UPbF PDP Trench IGBT
IRG71C28U PDP TRENCH IGBT

Full PDF Text Transcription

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PDP TRENCH IGBT PD - 97402A IRG7S313UPbF Features Key Parameters l Advanced Trench IGBT Technology VCE min 330 V l Optimized for Sustain and Energy Recovery VCE(ON) typ. @ IC = 20A 1.35 V circuits in PDP applications l Low VCE(on) and Energy per Pulse (EPULSETM) for improved panel efficiency IRP max @ TC= 25°C TJ max 160 A 150 °C l High repetitive peak current capability l Lead Free package C G E n-channel G Gate E C G D2Pak IRG7S313UPbF C Collector E Emitter Description This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced trench IGBT technology to achieve low VCE(on) and low EPULSETM rating per silicon area which improve panel efficiency.
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