Datasheet4U Logo Datasheet4U.com

IRG7SC12FPBF - INSULATED GATE BIPOLAR TRANSISTOR

Features

  • Low VCE (ON) Trench IGBT Technology Maximum Junction temperature 150 °C 3 μS short circuit SOA Square RBSOA Positive VCE (ON) Temperature co-efficient Tight parameter distribution Lead Free Package C VCES = 600V IC = 8A, TC = 100°C G E tSC ≥ 3μs, TJ(max) = 150°C n-channel VCE(on) typ. = 1.60V C Benefits.
  • High Efficiency in a HVAC, Refrigerator.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IRG4BC20F INSULATED GATE BIPOLAR TRANSISTOR IRF
IRG4BC20FD INSULATED GATE BIPOLAR TRANSISTOR IRF
IRG4BC20FD-S INSULATED GATE BIPOLAR TRANSISTOR IRF
IRG4BC20K INSULATED GATE BIPOLAR TRANSISTOR IRF
IRG4BC20K-S INSULATED GATE BIPOLAR TRANSISTOR IRF

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRG7SC28UPbF PDP Trench IGBT
IRG7S313U PDP TRENCH IGBT
IRG7S313UPBF PDP TRENCH IGBT
IRG7S319UPBF PDP TRENCH IGBT
IRG71C28U PDP TRENCH IGBT

Full PDF Text Transcription

Click to expand full text
PD - 96363 IRG7SC12FPbF INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • Low VCE (ON) Trench IGBT Technology Maximum Junction temperature 150 °C 3 μS short circuit SOA Square RBSOA Positive VCE (ON) Temperature co-efficient Tight parameter distribution Lead Free Package C VCES = 600V IC = 8A, TC = 100°C G E tSC ≥ 3μs, TJ(max) = 150°C n-channel VCE(on) typ. = 1.60V C Benefits • • • • High Efficiency in a HVAC, Refrigerator applications Rugged transient Performance for increased reliability Excellent Current sharing in parallel operation Low EMI www.DataSheet.
Published: |