IRG7RC10FDPBF - INSULATED GATE BIPOLAR TRANSISTOR

Features

Low VCE(on) Zero VCE(on) temperature coefficient 3µs Short Circuit Capability Ultra Fast Soft Recovery Co-pak Diode Square RBSOA G E C VCES = 600V IC = 9.0A, TC = 100°C tsc > 3μs, Tjmax = 150°C VCE(on) typ. = 1.6V @ IC = 5A n-channel Benefits.
Benchmark Efficiency for Motor Control.

International Rectifier

Datasheet Details

Part number	IRG7RC10FDPBF
Manufacturer	International Rectifier
File Size	344.13 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRG7RC10FDPBF Datasheet
Additional preview pages of the IRG7RC10FDPBF datasheet.

📁 Similar Datasheet

IRG4BC20F - INSULATED GATE BIPOLAR TRANSISTOR (IRF)
IRG4BC20FD - INSULATED GATE BIPOLAR TRANSISTOR (IRF)
IRG4BC20FD-S - INSULATED GATE BIPOLAR TRANSISTOR (IRF)
IRG4BC20K - INSULATED GATE BIPOLAR TRANSISTOR (IRF)
IRG4BC20K-S - INSULATED GATE BIPOLAR TRANSISTOR (IRF)
IRG4BC20KD - INSULATED GATE BIPOLAR TRANSISTOR (IRF)
IRG4BC20KD-S - INSULATED GATE BIPOLAR TRANSISTOR (IRF)
IRG4BC20MD - INSULATED GATE BIPOLAR TRANSISTOR (IRF)
IRG4BC20MD-S - INSULATED GATE BIPOLAR TRANSISTOR (IRF)
IRG4BC20S - INSULATED GATE BIPOLAR TRANSISTOR (IRF)

Other Datasheets by International Rectifier

IRG7RC07SDPBF - Standard speed IGBT
IRG7R313U - PDP Trench IGBT
IRG7R313UPBF - PDP Trench IGBT
IRG7RA13UPBF - PDP TRENCH IGBT
IRG71C28U - PDP TRENCH IGBT
IRG7I313UPBF - PDP TRENCH IGBT
IRG7IC28U - PDP TRENCH IGBT
IRG7IC28UPBF - PDP TRENCH IGBT

Full PDF Text Transcription

Click to expand full text

PD - 97759 IRG7RC10FDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • Low VCE(on) Zero VCE(on) temperature coefficient 3µs Short Circuit Capability Ultra Fast Soft Recovery Co-pak Diode Square RBSOA G E C VCES = 600V IC = 9.0A, TC = 100°C tsc > 3μs, Tjmax = 150°C VCE(on) typ. = 1.

Published: Mar 31, 2014 |