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PD - 95175
IRG4BC40SPbF
INSULATED GATE BIPOLAR TRANSISTOR
Features
• Standard: optimized for minimum saturation voltage and low operating frequencies ( < 1kHz) • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard TO-220AB package • Lead-Free
C
Standard Speed IGBT
VCES = 600V
G E
VCE(on) typ. = 1.32V
@VGE = 15V, IC = 31A
n-channel
Benefits
• Generation 4 IGBTs offer highest efficiency available • IGBTs optimized for specified application conditions • Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBTs
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IRG4BC40SPBF Datasheet
