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IRG4BC40S - HEXFET Power MOSFET

Features

  • Standard: optimized for minimum saturation voltage and low operating frequencies ( < 1kHz).
  • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3.
  • Industry standard TO-220AB package C Standard Speed IGBT VCES = 600V G E VCE(on) typ. = 1.32V @VGE = 15V, IC = 31A n-channel Benefits.
  • Generation 4 IGBTs offer highest efficiency available.
  • IGBTs optimized for specified.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PD - 91455B IRG4BC40S INSULATED GATE BIPOLAR TRANSISTOR Features • Standard: optimized for minimum saturation voltage and low operating frequencies ( < 1kHz) • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard TO-220AB package C Standard Speed IGBT VCES = 600V G E VCE(on) typ. = 1.
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