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IRG4BC40KPBF - INSULATED GATE BIPOLAR TRANSISTOR

Features

  • Short Circuit Rated UltraFast: optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V.
  • Generation 4 IGBT design provides higher efficiency than Generation 3.
  • Industry standard TO-247AC package.
  • Lead-Free C Short Circuit Rated UltraFast IGBT VCES = 600V G E VCE(on) typ. = 2.1V @VGE = 15V, IC = 25A n-channel Benefits.
  • Generation 4 IGBTs offer highest efficiency available.
  • IGBTs optimized for.

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Full PDF Text Transcription (Reference)

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PD -95174 IRG4BC40KPbF INSULATED GATE BIPOLAR TRANSISTOR Features • Short Circuit Rated UltraFast: optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V • Generation 4 IGBT design provides higher efficiency than Generation 3 • Industry standard TO-247AC package • Lead-Free C Short Circuit Rated UltraFast IGBT VCES = 600V G E VCE(on) typ. = 2.1V @VGE = 15V, IC = 25A n-channel Benefits • Generation 4 IGBTs offer highest efficiency available • IGBTs optimized for specified application conditions www.DataSheet4U.
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