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IRG4BC40F - HEXFET Power MOSFET

Features

  • Fast: optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode).
  • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3.
  • Industry standard TO-220AB package C Fast Speed IGBT VCES = 600V G E VCE(on) typ. = 1.50V @VGE = 15V, IC = 27A n-channel Benefits.
  • Generation 4 IGBTs offer highest efficiency available.
  • IGBTs optimized for specified.

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Full PDF Text Transcription (Reference)

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PD - 91454B IRG4BC40F INSULATED GATE BIPOLAR TRANSISTOR Features • Fast: optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard TO-220AB package C Fast Speed IGBT VCES = 600V G E VCE(on) typ. = 1.
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