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IRF7832ZPBF - HEXFET Power MOSFET

Key Features

  • Q1. For the synchronous MOSFET Q2, Rds(on) is an important characteristic; however, once again the importance of gate charge must not be overlooked since it impacts three critical areas. Under light load the MOSFET must still be turned on and off by the control IC so the gate drive losses become much more significant. Secondly, the output charge Qoss and reverse recovery charge Qrr both generate losses that are transfered to Q1 and increase the dissipation in that device. Thirdly, gate charge w.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com PD - 96013A IRF7832ZPbF HEXFET® Power MOSFET Applications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters Benefits l Very Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage and Current l 20V VGS Max. Gate Rating l Lead-Free l 100% tested for Rg VDSS 30V 3.8m:@VGS = 10V A A D D D D RDS(on) max Qg 30nC S S S G 1 2 3 4 8 7 6 5 Top View SO-8 Absolute Maximum Ratings Parameter VDS VGS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Max. 30 ± 20 21 17 160 2.5 1.6 0.