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IRF7805PBF - Power MOSFET

General Description

This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge.

The reduced conduction and switching losses make this device ideal for high efficiency DC-DC Converters that power the latest generation of mobile microprocessors.

Key Features

  • VDSS RDS(on) Qg QSW QOSS IRF7805PbF 30V 11m 31nC 11.5nC 36nC G Gate D Drain S Source Base part number Package Type IRF7805PbF SO-8 Standard Pack Form Quantity Tape and Reel 4000 Orderable Part Number IRF7805PbF Symbol VDS VGS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C TJ TSTG Para.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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   N Channel Application Specific MOSFETs  Ideal for Mobile DC-DC Converters  Low Conduction Losses  Low Switching Losses  Lead-Free Description This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduced conduction and switching losses make this device ideal for high efficiency DC-DC Converters that power the latest generation of mobile microprocessors. The IRF7805PbF offers maximum efficiency for mobile CPU core DC-DC converters. IRF7805PbF HEXFET® Chip-Set for DC-DC Converters   S1 S2 S3 G4 AA 8D 7D 6D 5D Top View   SO-8 IRF7805PbF Devices Features VDSS RDS(on) Qg QSW QOSS IRF7805PbF 30V 11m 31nC 11.