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IRF7832 - HEXFET Power MOSFET

Key Features

  • age has been reached and the time the drain current rises to Idmax at which time the drain voltage begins to change. Minimizing Qgs2 is a critical factor in reducing switching losses in Q1. Qoss is the charge that must be supplied to the output capacitance of the MOSFET during every switching cycle. Figure A shows how Qoss is formed by the parallel combination of the voltage dependant (nonlinear) capacitance’s Cds and Cdg when multiplied by the power supply input buss voltage. 8 Synchronous FET.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PD - 94594E IRF7832 Applications l Synchronous MOSFET for Notebook VDSS Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters in 30V Networking Systems Benefits l Very Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance S S S l Fully Characterized Avalanche Voltage G and Current l 20V VGS Max. Gate Rating l 100% tested for Rg HEXFET® Power MOSFET RDS(on) max Qg :4.