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IRF6722STRPBF - Power MOSFET

Download the IRF6722STRPBF datasheet PDF (IRF6722SPBF included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for power mosfet.

Description

The IRF6722SPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile.

Features

  • e Forward Voltage Typical VGS(th) Gate threshold Voltage (V) Fig11. Maximum Safe Operating Area 3.0 60 50 ID, Drain Current (A) 2.5 40 30 20 10 0 25 50 75 100 125 150 T C , Case Temperature (°C) 2.0 ID = 50µA ID = 150µA 1.5 ID = 250µA ID = 1.0mA ID = 1.0A 1.0 -75 -50 -25 0 25 50 75 100 125 150 T J , Temperature ( °C ) Fig 12. Maximum Drain Current vs. Case Temperature 350 EAS , Single Pulse Avalanche Energy (mJ) Fig 13. Typical Threshold Voltage vs. Junction Temperature ID TOP 0.98A 1.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRF6722SPBF_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

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Full PDF Text Transcription

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PD - 96137 IRF6722SPbF IRF6722STRPbF l l l l l l l l l l RoHS Compliant Containing No Lead and Bromide  Low Profile (<0.7 mm) Dual Sided Cooling Compatible  Ultra Low Package Inductance Optimized for High Frequency Switching  Ideal for CPU Core DC-DC Converters Optimized for Control FET application Low Conduction and Switching Losses Compatible with existing Surface Mount Techniques  100% Rg tested Typical values (unless otherwise specified) DirectFET™ Power MOSFET ‚ RDS(on) Qgs2 1.2nC VDSS Qg tot VGS Qgd 4.1nC RDS(on) Qoss 11nC 30V max ±20V max 4.7mΩ@ 10V 8.0mΩ@ 4.5V Qrr 30nC Vgs(th) 1.9V 11nC ST Applicable DirectFET Outline and Substrate Outline (see p.
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