Datasheet4U Logo Datasheet4U.com

IRF6721STRPBF - Power MOSFET

Download the IRF6721STRPBF datasheet PDF (IRF6721SPBF included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for power mosfet.

Description

The IRF6721SPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile.

Features

  • V) Fig 10. Typical Source-Drain Diode Forward Voltage Typical VGS(th) Gate threshold Voltage (V) 60 50 ID, Drain Current (A) Fig11. Maximum Safe Operating Area 3.0 2.5 40 30 20 10 0 25 50 75 100 125 150 T C , Case Temperature (°C) 2.0 ID = 25µA ID = 100µA ID = 150µA ID = 250µA ID = 1.0mA ID = 1.0A 1.5 1.0 -75 -50 -25 0 25 50 75 100 125 150 T J , Temperature ( °C ) Fig 12. Maximum Drain Current vs. Case Temperature 250 EAS , Single Pulse Avalanche Energy (mJ) Fig 13. Typical Threshold V.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRF6721SPBF_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

  • IRF6775MTRPbF - DIGITAL AUDIO MOSFET (IRF)
  • IRF6785MTRPbF - DIGITAL AUDIO MOSFET (IRF)
  • IRF60B217 - N-Channel MOSFET (INCHANGE)
  • IRF60B217 - IR MOSFET (Infineon)
  • IRF60R217 - N-Channel MOSFET (INCHANGE)
  • IRF60R217 - IR MOSFET (Infineon)
  • IRF610 - N-Channel Mosfet Transistor (Inchange Semiconductor)
  • IRF610 - N-Channel Power MOSFET (Intersil Corporation)
  • IRF610 - N-Channel Power MOSFET (Fairchild Semiconductor)
  • IRF610 - Power MOSFET (Vishay)
Other Datasheets by International Rectifier

Full PDF Text Transcription

Click to expand full text
PD - 96133A IRF6721SPbF IRF6721STRPbF l l l l l l l l l l RoHS Compliant and Halogen Free  Low Profile (<0.7 mm) Dual Sided Cooling Compatible  Ultra Low Package Inductance Optimized for High Frequency Switching  Ideal for CPU Core DC-DC Converters Optimized for Control FET application Low Conduction and Switching Losses Compatible with existing Surface Mount Techniques  100% Rg tested Typical values (unless otherwise specified) DirectFET™ Power MOSFET ‚ RDS(on) Qgs2 1.3nC VDSS Qg tot VGS Qgd 3.7nC RDS(on) Qoss 7.9nC 30V max ±20V max 5.1mΩ@ 10V 8.5mΩ@ 4.5V Qrr 19nC Vgs(th) 1.9V 11nC SQ Applicable DirectFET Outline and Substrate Outline (see p.
Published: |