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IRF6720S2TRPBF - Power MOSFET

Download the IRF6720S2TRPBF datasheet PDF. This datasheet also covers the IRF6720S2TR1PBF variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

The IRF6720S2PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve improved performance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile.

Features

  • 1 0.10 1.00 10.00 100.00 VDS, Drain-to-Source Voltage (V) Fig 10. Typical Source-Drain Diode Forward Voltage Typical V GS(th) Gate threshold Voltage (V) Fig 11. Maximum Safe Operating Area 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -75 -50 -25 0 25 50 75 100 125 150 175 T J , Temperature ( °C ) ID = 25µA ID = 250µA ID = 1.0mA ID = 1.0A 35 30 ID, Drain Current (A) 25 20 15 10 5 0 25 50 75 100 125 150 175 T C , Case Temperature (°C) Fig 12. Maximum Drain Current vs. Case Temperature 50 T J = 25°C G.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRF6720S2TR1PBF_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRF6720S2TR1PBF Power MOSFET
IRF6721SPBF Power MOSFET
IRF6721STRPBF Power MOSFET
IRF6722MPBF Power MOSFET
IRF6722MTRPBF Power MOSFET

Full PDF Text Transcription

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PD - 97315 IRF6720S2TRPbF IRF6720S2TR1PbF l l l l l l l l l RoHS Compliant Containing No Lead and Bromide  Low Profile (<0.7 mm) Dual Sided Cooling Compatible  Ultra Low Package Inductance Optimized for High Frequency Switching  Ideal for CPU Core DC-DC Converters Optimized for Control FET Application Compatible with existing Surface Mount Techniques  100% Rg tested Typical values (unless otherwise specified) DirectFET™ Power MOSFET ‚ RDS(on) Qgs2 0.9nC VDSS Qg tot VGS Qgd 2.8nC RDS(on) Qoss 5.1nC 30V max ±20V max 6.0mΩ@ 10V 9.8mΩ@ 4.5V Qrr 14nC Vgs(th) 2.0V 7.
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