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IRF6722MTRPBF - Power MOSFET

Download the IRF6722MTRPBF datasheet PDF. This datasheet also covers the IRF6722MPBF variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

The IRF6722MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile.

Features

  • 10. Typical Source-Drain Diode Forward Voltage 60 50 ID, Drain Current (A) Fig11. Maximum Safe Operating Area Typical VGS(th) Gate threshold Voltage (V) 3.0 2.5 40 30 20 10 0 25 50 75 100 125 150 T C , Case Temperature (°C) 2.0 ID = 50µA 1.5 ID = 150µA ID = 1.0mA ID = 1.0A ID = 250µA 1.0 0.5 -75 -50 -25 0 25 50 75 100 125 150 T J , Temperature ( °C ) Fig 12. Maximum Drain Current vs. Case Temperature 350 Fig 13. Typical Threshold Voltage vs. Junction Temperature ID 0.98A 1.23A BOTTOM.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRF6722MPBF_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRF6722MPBF Power MOSFET
IRF6722SPBF Power MOSFET
IRF6722STRPBF Power MOSFET
IRF6720S2TR1PBF Power MOSFET
IRF6720S2TRPBF Power MOSFET

Full PDF Text Transcription

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PD - 96136 IRF6722MPbF IRF6722MTRPbF RoHS Compliant Containing No Lead and Bromide  Low Profile (<0.7 mm) l Dual Sided Cooling Compatible  l Ultra Low Package Inductance l Optimized for High Frequency Switching  l Ideal for CPU Core DC-DC Converters l Optimized for Control FET application l Low Conduction and Switching Losses l Compatible with existing Surface Mount Techniques  l 100% Rg tested l l Typical values (unless otherwise specified) DirectFET™ Power MOSFET ‚ RDS(on) Qgs2 1.2nC VDSS Qg tot VGS Qgd 4.3nC RDS(on) Qoss 11nC 30V max ±20V max 4.7mΩ@ 10V 8.0mΩ@ 4.5V Qrr 26nC Vgs(th) 1.8V 11nC MP Applicable DirectFET Outline and Substrate Outline (see p.
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